| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,051 pcs
|
6051 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,620 pcs
|
1620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW20N95K5 is an N-Channel Power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications, featuring a maximum drain-source voltage (Vds) of 950V and a continuous drain current (Id) of 17.5A at case temperature. The device offers a low on-resistance of 330mOhm maximum at Vgs=10V and Id=9A, enabling efficient power conversion.
Key electrical parameters include a gate threshold voltage of 5V maximum, a gate charge of 40nC at Vgs=10V, and an input capacitance of 1500pF at Vds=100V. These characteristics support fast switching and reduced drive losses. The maximum power dissipation is 250W at case temperature.
The STW20N95K5 is housed in a TO-247-3 through-hole package, which provides excellent thermal performance and is suitable for mounting on heatsinks. This package is commonly used in high-power applications such as switch-mode power supplies, power factor correction circuits, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 950V.
The maximum gate threshold voltage is 5V at Id = 100µA.
The maximum on-resistance is 330mOhm at Vgs = 10V and Id = 9A.
The device comes in a TO-247-3 through-hole package.
The maximum gate charge is 40nC at Vgs = 10V.
The maximum input capacitance is 1500pF at Vds = 100V.
The maximum power dissipation is 250W at case temperature.