| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
280 pcs
|
280 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The STMicroelectronics STW20N65M5 is an N-channel MDmesh V Power MOSFET. It utilizes an innovative vertical process technology combined with a horizontal layout structure to achieve extremely low on-resistance. This MOSFET is rated for a 650V drain-source voltage and a continuous drain current of 18A at 25°C.
Key electrical characteristics include a maximum on-resistance of 190mOhm at 9A and 10V, and a gate charge of 45nC at 10V. The device operates over a wide temperature range from -55°C to 150°C.
Packaged in a TO-247-3 configuration, this through-hole component is suitable for various switching applications requiring high power density and efficiency. The MOSFET is 100% avalanche tested, offering excellent switching performance and high dv/dt capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
18A at case temperature 25°C.
Maximum 190 mOhm at 9A and 10V gate-source.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package.
45 nC at 10V gate-source.