| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
996 pcs
|
996 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW200NF03 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 120A at 25°C.
This MOSFET offers a low on-resistance (Rds On) of 2.8mOhm at 60A and 10V gate drive voltage, contributing to efficient power handling. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate charge (Qg) is 280nC at 10V.
With a maximum power dissipation of 350W (Tc), the STW200NF03 operates across a wide temperature range from -55°C to 175°C (TJ). It is mounted via a through-hole method and comes in a TO-247-3 package.
This component is part of the STripFET™ II series and utilizes Metal Oxide Semiconductor (MOSFET) technology. It is suitable for various power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
120A at 25°C.
Maximum 2.8mOhm at 60A and 10V gate drive.
-55°C to 175°C.
TO-247-3 through-hole package.
Maximum 4V at 250µA drain current.
350W (Tc).