STW19NM60N The STMicroelectronics STW19NM60N is an N-Channel MOSFET designed for high voltage applications. It features a 600V drain-source voltage and a 13A continuous drain current.
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STW19NM60N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW19NM60N is an N-Channel MOSFET designed for high voltage applications. It features a 600V drain-source voltage and a 13A continuous drain current.
✓ Total Stock: 1,040 pcs
$ Price Range: $2.56

STW19NM60N Available from 1 distributor

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✓ Non-Authorised
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1,040 pcs
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STW19NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW19NM60N Description

Short technical summary and product information.

The STMicroelectronics STW19NM60N is a power MOSFET with a 600V drain-to-source voltage rating. This N-Channel device is designed for efficient power switching applications.

 

Key electrical characteristics include a maximum continuous drain current of 13A (Tc) and a maximum on-resistance of 285mOhm at 6.5A and 10V gate drive. The gate threshold voltage is 4V at 250µA, and the maximum gate-to-source voltage is ±25V. Input capacitance (Ciss) is rated at 1000pF at 50V, and gate charge (Qg) is 35nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-247-3 package and features a through-hole mounting type, making it suitable for various power electronics designs.

 

The device is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected. These compliance attributes are based on available data.

STW19NM60N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STW19NM60N N-Channel MOSFET
Subcategory: Single

STW19NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW19NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW19NM60N Features

  • 600V drain-source voltage rating.
  • 13A continuous drain current.
  • Low 285mOhm Rds On at 6.5A, 10V.
  • TO-247-3 through-hole package.
  • Operates from -55°C to 150°C.

STW19NM60N Applications

  • Suitable for power supply designs.
  • Used in motor control circuits.
  • Ideal for general switching applications.
  • High voltage power conversion.

STW19NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STW19NM60N?

The maximum drain-to-source voltage is 600V.

What is the package type of the STW19NM60N?

The STW19NM60N is supplied in a TO-247-3 package with through-hole mounting.

What is the operating temperature range of the STW19NM60N?

The junction operating temperature range is -55°C to 150°C.

What is the continuous drain current rating of the STW19NM60N?

The continuous drain current is 13A at case temperature.

What is the maximum on-resistance of the STW19NM60N?

The maximum on-resistance is 285mOhm at Vgs=10V and Id=6.5A.

What is the gate charge of the STW19NM60N?

The gate charge is 35nC at Vgs=10V.

What is the FET type of the STW19NM60N?

It is an N-Channel MOSFET.

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