| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,140 pcs
|
3140 pcs | On Request | 1 | On Request | On Request | 1507+ | On Request | On Request | |
|
2,113 pcs
|
2113 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 1049 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW19NM50N is an N-Channel MOSFET designed for high-voltage switching applications. It offers a maximum drain-source voltage of 500V and a continuous drain current of 14A at case temperature. The device has a maximum power dissipation of 110W. With a typical on-resistance of 250mOhm at 7A drain current and 10V gate-source voltage, it provides efficient switching performance. The gate charge is 34nC at 10V, and input capacitance is 1000pF at 50V drain-source voltage. The gate threshold voltage is 4V at 250µA. The device is housed in a TO-247-3 through-hole package, suitable for high-power applications requiring efficient heat dissipation. The operating junction temperature is up to 150°C. This MOSFET is suitable for use in power supplies, motor drives, and other high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
14A at case temperature.
110W at case temperature.
250mOhm at 7A and 10V gate drive.
34nC at 10V.
150°C.
TO-247-3 through-hole.