| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW18NM60N is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 13A at a case temperature (Tc). The on-resistance (Rds On) is specified as a maximum of 285mOhm at 6.5A and 10V gate-source voltage (Vgs). The gate charge (Qg) is a maximum of 35nC at 10V Vgs, and input capacitance (Ciss) is 1000pF at 50V Vds.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum power dissipation is 110W (Tc).
The STW18NM60N is packaged in a TO-247-3 through-hole configuration, making it suitable for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The maximum continuous drain current is 13A at case temperature.
The typical on-resistance is 285mOhm maximum at 6.5A, 10V gate drive.
The STW18NM60N comes in a TO-247-3 through-hole package.
The operating junction temperature range is from -55°C to 150°C.
The maximum gate-source voltage is ±25V.
The typical gate charge is 35nC at 10V.