| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,693 pcs
|
9693 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW18NK80Z is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 19A at case temperature.
The MOSFET has a maximum gate-to-source voltage (Vgs) of ±30V and a gate threshold voltage (Vgs(th)) of 4.5V at 150µA. Key electrical parameters include a maximum on-resistance (Rds On) of 380mOhm at 10A and 10V, input capacitance (Ciss) of 6100 pF at 25V, and gate charge (Qg) of 250 nC at 10V.
With a maximum power dissipation of 350W (Tc), it operates within a temperature range of -55°C to 150°C (TJ). The component is housed in a TO-247-3 package and utilizes through-hole mounting.
This MOSFET is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
19A at case temperature.
380mOhm at 10A, 10V.
TO-247-3.
-55°C to 150°C junction temperature.
4.5V at 150µA.
250nC at 10V.