| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW18N60M2 is an N-Channel Power MOSFET designed for high-performance power applications. It features a breakdown voltage (Vds) of 600V and a continuous drain current (Id) of 18A at 25°C.
Key electrical characteristics include a typical on-resistance (Rds(on)) of 0.19 ohm at 9A and 10V Vgs, and a maximum gate charge (Qg) of 45 nC. The device operates within a temperature range of -55°C to +150°C and has a power dissipation of 110W.
Packaged in a TO-247 through-hole configuration, the STW18N60M2 is suitable for applications such as Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), and High-Frequency DC-DC Converters. Its robust design and specifications make it a reliable choice for demanding power conversion tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-247-3 through-hole package.
-55°C to 150°C junction temperature.
0.19 ohm at VGS=10V, ID=9A.
18 A.
700 mJ.
45 nC at VGS=10V.