STW18N60DM2 The STW18N60DM2 is an N-channel Power MOSFET from STMicroelectronics, featuring 600V drain-source voltage and 12A continuous drain current. It is housed in a TO-247 package.
Mfr Part #:

STW18N60DM2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STW18N60DM2 is an N-channel Power MOSFET from STMicroelectronics, featuring 600V drain-source voltage and 12A continuous drain current. It is housed in a TO-247 package.
✓ Total Stock: 1,440 pcs
$ Price Range: $2.56

STW18N60DM2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,440 pcs
1440 pcs On Request 1 On Request On Request On Request On Request On Request

STW18N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW18N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STW18N60DM2 is a high voltage N-channel Power MOSFET designed for demanding switching applications. Part of the MDmesh™ DM2 fast recovery diode series, it offers a 600V drain-source voltage (Vds) and a continuous drain current (ID) of 12A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 295mΩ at 6A and 10V, a gate-source voltage (Vgs) range of ±25V, and a gate charge (Qg) of 20nC at 10V. The device also features a fast-recovery body diode, extremely low gate charge and input capacitance, and high dv/dt ruggedness.

 

This MOSFET is suitable for high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. It operates at a maximum junction temperature of 150°C and has a total power dissipation of 90W at 25°C case temperature. The component is supplied in a TO-247 package with through-hole mounting.

 

Additional features include 100% avalanche testing and Zener protection. The STW18N60DM2 is designed for robust performance in various switching applications.

STW18N60DM2 Quick Information

Product Type: Power MOSFET
Series: MDmesh™ DM2
Canonical Name: STW18N60DM2 N-channel 600V 12A Power MOSFET
Subcategory: N-Channel

STW18N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW18N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW18N60DM2 Features

  • 600V drain-source voltage rating.
  • 12A continuous drain current at 25°C.
  • Low on-resistance of 295mOhm maximum.
  • 100% avalanche tested for ruggedness.
  • Fast-recovery body diode included.

STW18N60DM2 Applications

  • Used in switching power supply designs.
  • Ideal for motor control circuits.
  • Suitable for high-efficiency converters.
  • Applied in lighting ballast systems.

STW18N60DM2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STW18N60DM2?

The maximum drain-source voltage is 600V.

What is the continuous drain current rating of the STW18N60DM2?

The continuous drain current is 12A at 25°C case temperature and 7.6A at 100°C case temperature.

What is the on-resistance of the STW18N60DM2?

The maximum on-resistance is 295mOhm at 6A drain current and 10V gate-source voltage.

What package does the STW18N60DM2 come in?

The STW18N60DM2 is available in a TO-247-3 through-hole package.

What is the maximum operating junction temperature of the STW18N60DM2?

The maximum operating junction temperature is 150°C.

Home
Account

Categories