| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,842 pcs
|
2842 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW17N62K3 is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 15.5A at 25°C.
This MOSFET offers a maximum power dissipation of 190W (Tc) and a low on-resistance (Rds On) of 380mOhm at 7.5A and 10V gate drive voltage. The gate charge (Qg) is 94nC maximum at 10V, and the input capacitance (Ciss) is 2500pF maximum at 50V.
Designed with MOSFET (Metal Oxide) technology, the STW17N62K3 has a gate threshold voltage (Vgs(th)) of 4.5V maximum at 100µA and a maximum gate-source voltage (Vgs) of ±30V. It operates at temperatures up to 150°C (TJ).
The component is supplied in a TO-247-3 package, suitable for through-hole mounting. This package provides robust power handling and effective heat dissipation for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 620V.
The continuous drain current (Id) at 25°C is 15.5A.
The maximum power dissipation is 190W (Tc).
The Rds On is a maximum of 380mOhm at 7.5A and 10V.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-247-3 package.
It is a through-hole mounted component.