| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
440 pcs
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440 pcs | On Request | 1 | On Request | On Request | 732 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW16NM50N is an N-channel power MOSFET utilizing MDmesh II technology. This device is designed for high efficiency switching applications, offering a drain-source voltage (Vds) of 500V and a maximum continuous drain current (Id) of 15A at 25°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 260mOhm at 7.5A and 10V gate-source voltage, and a gate charge (Qg) of 38nC at 10V. The MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 125W.
Packaged in a TO-247-3 through-hole configuration, the STW16NM50N is suitable for various power conversion designs. Its features include 100% avalanche tested, low input capacitance, and low gate input resistance, making it a robust choice for demanding applications.
This MOSFET series is designed for the most demanding high efficiency converters, leveraging a revolutionary Power MOSFET technology that associates a new vertical structure with a strip layout to achieve low on-resistance and gate charge.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum (550V at maximum junction temperature).
TO-247-3 through-hole package.
Maximum junction temperature is 150°C. Storage temperature range is -55°C to 150°C.
Maximum 260mOhm at 7.5A drain current and 10V gate-source voltage.
38nC at 10V gate-source voltage.
15A at Tc=25°C and 9.4A at Tc=100°C.
N-channel, metal oxide semiconductor (MOSFET).