Mfr Part #:

STW16N65M5

The STMicroelectronics STW16N65M5 is an N-channel Power MOSFET designed for switching applications. It offers a 650V drain-source voltage and a continuous current of 12A.

✓ Total Stock: 7,420 pcs

$ Price Range: $2.56

STW16N65M5 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Hybrid Electronics ✓ Non-Authorised Inventory information	7,200 pcs On Request	7200 pcs	On Request	1	On Request	On Request	935	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	220 pcs On Request	220 pcs	On Request	1	On Request	On Request	1201+	On Request	On Request

STW16N65M5 Description

Short technical summary and product information.

The STMicroelectronics STW16N65M5 is an N-channel MDmesh™ V Power MOSFET. It is built using an innovative proprietary vertical process technology combined with STMicroelectronics’ PowerMESH™ horizontal layout structure. This results in extremely low on-resistance, making it suitable for applications requiring superior power density and outstanding efficiency.

Key electrical specifications include a drain-source voltage (VDSS) of 650V and a maximum continuous drain current (ID) of 12A at 25°C. The on-resistance (Rds On) is a maximum of 279mOhm at 6A and 10V gate-source voltage. The device features a gate-source voltage range of ±25V and a gate threshold voltage of 5V at 250µA. Input capacitance (Ciss) is 1250pF at 100V, and gate charge (Qg) is 31nC at 10V.

With a maximum power dissipation of 90W at 25°C and an operating junction temperature up to 150°C, this MOSFET is designed for demanding thermal conditions. It is housed in a TO-247-3 package and supports through-hole mounting.

This MOSFET is 100% avalanche tested and offers high dv/dt capability and excellent switching performance, making it easy to drive in various switching applications.

STW16N65M5 Quick Information

Product Type: Power MOSFET

Series: MDmesh™ V

Canonical Name: STMicroelectronics STW16N65M5 N-Channel 650V Power MOSFET

Subcategory: N-Channel

STW16N65M5 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STW16N65M5 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW16N65M5 Features

N-channel 650V Power MOSFET.
Low on-resistance: 279mOhm maximum.
Continuous current rating of 12A.
TO-247-3 package for through-hole mounting.
Optimized for switching applications.

STW16N65M5 Applications

Suitable for high-efficiency switching.
Designed for superior power density.
Ideal for demanding applications.
Offers excellent switching performance.

STW16N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

650 V

What is the package type?

TO-247-3

What is the maximum operating junction temperature?

150 °C

What is the maximum continuous drain current?

12 A at case temperature 25°C

What is the typical on-resistance?

Maximum 279 mOhm at 6A, 10V gate drive

What is the gate threshold voltage?

Up to 5 V at 250 µA drain current

What is the gate charge?

Maximum 31 nC at 10V gate-source voltage

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	12A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	90W (Tc)
Rds On (Max) @ Id, Vgs	279mOhm @ 6A, 10V
SVHC Present	Not Present
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	5V @ 250µA