STW160N75F3 The STMicroelectronics STW160N75F3 is an N-Channel MOSFET with a 75V drain-source voltage and 120A continuous drain current. It is housed in a Through Hole TO-247-3 package.
Mfr Part #:

STW160N75F3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW160N75F3 is an N-Channel MOSFET with a 75V drain-source voltage and 120A continuous drain current. It is housed in a Through Hole TO-247-3 package.
✓ Total Stock: 45 pcs
$ Price Range: $2.56

STW160N75F3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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45 pcs
45 pcs On Request 1 On Request On Request 15+ On Request On Request

STW160N75F3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW160N75F3 Description

Short technical summary and product information.

This STMicroelectronics STW160N75F3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at 25°C.

 

The MOSFET technology utilized is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). Key electrical characteristics include a low Rds On of 4mOhm at 60A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is rated at 6750 pF at 25V, and the gate charge (Qg) is 85 nC at 10V.

 

With a maximum power dissipation of 330W (Tc), this component operates within a temperature range of -55°C to 175°C (TJ). It is mounted using a Through Hole method and comes in a TO-247-3 package.

 

The STW160N75F3 is suitable for applications requiring high current and voltage handling capabilities. Its robust design and specifications make it a reliable choice for power management circuits.

STW160N75F3 Quick Information

Product Type: MOSFET
Series: STripFET™
Canonical Name: STMicroelectronics STW160N75F3 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STW160N75F3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW160N75F3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW160N75F3 Features

  • N-Channel MOSFET technology.
  • 75V drain-source voltage rating.
  • 120A continuous drain current.
  • Low 4mOhm Rds On resistance.
  • Through Hole mounting in TO-247-3 package.

STW160N75F3 Applications

  • Suitable for power switching applications.
  • Ideal for high current circuits.
  • Used in power management systems.
  • Designed for robust performance.

STW160N75F3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STW160N75F3?

The drain-source voltage (Vdss) is 75V.

What is the continuous drain current of the STW160N75F3?

The continuous drain current is 120A at 25°C.

What is the on-resistance of the STW160N75F3?

The maximum on-resistance is 4mOhm at 60A drain current and 10V gate-source voltage.

What package does the STW160N75F3 come in?

The STW160N75F3 is available in a through-hole TO-247-3 package.

What is the operating temperature range of the STW160N75F3?

The operating junction temperature range is -55°C to 175°C.

What is the maximum power dissipation of the STW160N75F3?

The maximum power dissipation is 330W.

What is the gate threshold voltage of the STW160N75F3?

The maximum gate threshold voltage is 4V at 250µA drain current.

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