| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,540 pcs
|
6540 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request | |
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | 942 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STW15NM60ND is a power MOSFET featuring an N-Channel enhancement mode. It offers a high drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of up to 14A at a case temperature.
The MOSFET has a maximum on-resistance (Rds On) of 299mOhm at 7A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate source voltage is ±25V.
Designed for through-hole mounting, this component comes in a TO-247-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 125W (Tc).
Key electrical characteristics include an input capacitance (Ciss) of 1250pF at 50V and a gate charge (Qg) of 40nC at 10V. The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
-55°C to 150°C (junction).
14A at case temperature.
Maximum 299mΩ at 7A and 10V gate drive.
40nC at 10V gate-source voltage.
1250pF at Vds=50V.