| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | 845 | On Request | On Request | |
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW15NM60N is an N-Channel MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 600V and a continuous drain current of 14A at 25°C. Maximum power dissipation is 125W. The on-resistance is 299mOhm maximum at 7A drain current and 10V gate drive. Gate charge is 37nC at 10V, and input capacitance is 1250pF at 50V. The gate threshold voltage is 4V at 250µA, and the maximum gate-source voltage is ±25V.
The device is designed for high-voltage switching applications such as power supplies, motor drives, and inverters. It uses MOSFET (Metal Oxide) technology and operates over a junction temperature range of -55°C to 150°C.
The STW15NM60N is packaged in a TO-247-3 through-hole package, which provides robust thermal performance and easy mounting on heatsinks. The supplier device package is also TO-247-3.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3.
-55°C to 150°C.
14A at 25°C.
299mOhm max at 7A, 10V.
37nC at 10V.
1250pF at 50V.