| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,320 pcs
|
43320 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The STW15NA50 is an N-Channel enhancement mode Fast Power MOSFET manufactured by STMicroelectronics. This device utilizes advanced high voltage technology for optimized cell layout and proprietary edge termination, resulting in low RDS(on) and gate charge, high ruggedness, and superior switching performance.
Key electrical specifications include a drain-source breakdown voltage of 500V and a continuous drain current of 14.6A at 25°C case temperature. The typical on-resistance is 0.33 Ohms at a gate-source voltage of 10V and a drain current of 7.5A. The gate threshold voltage is typically 3V.
This MOSFET is designed for high current, high-speed switching applications. It is suitable for use in switch mode power supplies (SMPS), DC-AC converters for welding equipment, and uninterruptible power supplies (UPS) and motor drives.
The device is available in TO-247, TO-218, and ISOWATT218 packages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The typical on-resistance is 0.33 Ohms at 10V gate-source voltage and 7.5A drain current.
The continuous drain current rating is 14.6A at 25°C case temperature.
The maximum operating junction temperature is 150°C.
The STW15NA50 is available in TO-247, TO-218, and ISOWATT218 packages.