| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW150NF55 is a high-performance N-Channel MOSFET. It is designed with a 55V drain-source breakdown voltage (Vds) and can handle a continuous drain current (Id) of 120A at a case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 6 mOhm at 60A and 10V gate-source voltage (Vgs). The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±20V. Input capacitance (Ciss) is 4400 pF at 25V, and gate charge (Qg) is 190 nC at 10V.
This MOSFET has a maximum power dissipation of 300W at the case temperature and operates within a wide temperature range of -55°C to 175°C.
The STW150NF55 is packaged in a TO-247-3 through-hole configuration, making it suitable for various power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The continuous drain current is 120A.
The on-resistance is 6 mOhm at 60A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C.
This MOSFET is in a TO-247-3 package.
This MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.