| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW14NM50FD is an N-channel power MOSFET manufactured by STMicroelectronics, designed for high-voltage power switching applications. This component features a maximum drain-to-source voltage (Vdss) of 500V, making it suitable for demanding industrial and consumer power systems. The device supports a continuous drain current of 14A, providing robust performance in moderate to high-power circuits.
Electrical characteristics include a maximum input capacitance (Ciss) of 1000pF measured at 25V and a gate charge (Qg) of 12nC at 10V. These parameters indicate efficient switching capabilities with manageable drive requirements. The TO247-3 through-hole package ensures secure mechanical mounting and effective heat dissipation, which is critical for maintaining stable operation under load.
Engineers can integrate this MOSFET into various power conversion topologies, including motor drives, lighting ballasts, and general-purpose AC/DC converters. Its standardized pinout and proven reliability simplify PCB layout and thermal design processes. The component operates as a single discrete transistor within larger semiconductor assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 500V.
The component is housed in a TO247-3 through-hole package.
The maximum input capacitance is 1000pF when measured at 25V.
The maximum gate charge is 12nC at a gate-to-source voltage of 10V.