| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22 pcs
|
22 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW13N60M2 is an N-Channel MOSFET designed for power applications. It offers a high drain-to-source voltage rating of 600V and a continuous drain current of 11A (Tc).
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA, a maximum gate-to-source voltage of ±25V, and a maximum on-resistance of 380mOhm at 5.5A and 10V gate drive. The input capacitance (Ciss) is rated at a maximum of 580pF at 100V, and the gate charge (Qg) is a maximum of 17nC at 10V.
This MOSFET is housed in a TO-247-3 package and is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc).
The STW13N60M2 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600 V.
The maximum continuous drain current is 11A (Tc).
The package type is TO-247-3.
It is mounted using the through-hole method.
The operating temperature range is -55°C to 150°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.