| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 750 | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The STMicroelectronics STW12NM60N is a second-generation MDmesh™ N-channel Power MOSFET designed for high-efficiency converters and demanding switching applications. It offers a breakdown voltage of 600V and a continuous drain current of 10A at 25°C.
Key electrical characteristics include a maximum on-resistance of 0.41 Ohms at 5A and 10V, an input capacitance of 960pF at 50V, and a gate charge of 30.5nC at 10V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 90W at 25°C.
This MOSFET is housed in a TO-247-3 package and is designed for through-hole mounting. Its features, such as low input capacitance and low gate charge, contribute to its suitability for high-efficiency power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10A at 25°C case temperature, 6.3A at 100°C.
0.41 ohm maximum at 5A drain current and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package.
4V maximum at 250µA drain current.
960 pF maximum at 50V drain-source voltage.