STW12NK60Z The STMicroelectronics STW12NK60Z is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and 10A continuous drain current.
Mfr Part #:

STW12NK60Z

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW12NK60Z is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and 10A continuous drain current.
✓ Total Stock: 2,373 pcs
$ Price Range: $2.56

STW12NK60Z Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
40 pcs
40 pcs On Request 1 On Request On Request 09+ On Request On Request

STW12NK60Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STW12NK60Z Description

Short technical summary and product information.

The STMicroelectronics STW12NK60Z is an N-Channel MOSFET with a metal oxide technology. It is designed for power applications, offering a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 640mOhm at 5A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA. The device has a maximum gate-source voltage (Vgs) of ±30V and an input capacitance (Ciss) of 1740pF at 25V.

 

This MOSFET has a maximum power dissipation of 150W and an operating temperature range of up to 150°C (TJ). It is housed in a TO-247-3 package and features a through-hole mounting type, making it suitable for various power electronics designs.

 

The STW12NK60Z is part of the SuperMESH™ series. Its specifications make it a candidate for applications requiring high voltage and current handling capabilities.

STW12NK60Z Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STMicroelectronics STW12NK60Z N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STW12NK60Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STW12NK60Z Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW12NK60Z Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • 10A continuous drain current at 25°C.
  • Maximum Rds On of 640mOhm at 5A, 10V.
  • 150W maximum power dissipation.
  • TO-247-3 package with through-hole mounting.

STW12NK60Z Applications

  • Suitable for high voltage power applications.
  • Used in power supply circuits.
  • Ideal for switching applications.
  • Component in motor control systems.

STW12NK60Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the STW12NK60Z?

600V.

What is the maximum continuous drain current?

10A at 25°C case temperature.

What is the typical on-resistance?

640mOhm maximum at 5A drain current and 10V gate-to-source voltage.

What is the gate charge of this MOSFET?

59nC maximum at 10V gate-to-source voltage.

What is the input capacitance?

1740pF maximum at 25V drain-to-source voltage.

What package is the STW12NK60Z available in?

TO-247-3 through-hole package.

What is the maximum operating junction temperature?

150°C.

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