| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,220 pcs
|
2220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,383 pcs
|
1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW120NF10 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 110A at a case temperature of 25°C. The device has a low on-resistance (Rds On) of 10.5mOhm at 60A and 10V gate-source voltage, making it efficient for power switching applications.
With a maximum power dissipation of 312W (Tc), the STW120NF10 is suitable for demanding applications. It operates within a temperature range of -55°C to 175°C (TJ). The MOSFET is designed for through-hole mounting and comes in a TO-247-3 package, offering robust thermal performance.
Key electrical characteristics include a gate charge (Qg) of 233nC at 10V and an input capacitance (Ciss) of 5200pF at 25V. The gate-to-source voltage (Vgs) maximum is ±20V, and the gate-to-source threshold voltage (Vgs(th)) is 4V at 250µA. This MOSFET utilizes Metal Oxide Semiconductor technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 110A at case temperature.
The on-resistance (Rds on) is 10.5 mOhm maximum at 60A and 10V gate drive.
The gate charge (Qg) is 233 nC maximum at 10V gate voltage.
The junction temperature range is from -55°C to 175°C.
The device is supplied in a TO-247-3 through-hole package.
The input capacitance (Ciss) is 5200 pF at 25V drain-source voltage.