| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,432 pcs
|
4432 pcs | On Request | 1 | On Request | On Request | 2017+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW11NM80 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power switching applications, offering a high drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 400mOhm at 5.5A and 10V gate-source voltage, a maximum gate charge (Qg) of 43.6nC at 10V, and an input capacitance (Ciss) of 1630pF at 25V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±30V.
This MOSFET operates within a temperature range of -65°C to 150°C (TJ). It is housed in a TO-247-3 package and features a through-hole mounting type. The maximum power dissipation is rated at 150W (Tc).
The STW11NM80 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. Its robust specifications make it suitable for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V.
TO-247-3.
-65°C to 150°C.
11 A at case temperature.
400 mOhm at 5.5A and 10V Vgs.