| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,590 pcs
|
1590 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW11NK100Z is a power MOSFET with an N-Channel configuration. It is designed to handle a maximum drain-to-source voltage (Vds) of 1000V and a continuous drain current (Tc) of 8.3A. The MOSFET has a maximum on-resistance (Rds On) of 1.38 Ohms at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 4.15A. Its gate charge (Qg) is 162 nC at 10V, and its input capacitance (Ciss) is 3500 pF at 25V.
This device operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology. The maximum power dissipation is rated at 230W (Tc).
The STW11NK100Z is packaged in a TO-247-3 configuration and features through-hole mounting. It has a gate-source voltage (Vgs) limit of ±30V and a gate threshold voltage (Vgs(th)) of 4.5V at 100µA.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This component is suitable for various power switching and control applications requiring high voltage capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1000 V.
The device comes in a TO-247-3 package with through-hole mounting.
-55°C to 150°C (junction temperature).
8.3 A at case temperature (Tc).
Maximum 1.38 Ohm at Id=4.15A and Vgs=10V.
Maximum 4.5 V at Id=100 µA.
±30 V.