| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,921 pcs
|
9921 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STW11NB80 is an N-Channel Power MOSFET utilizing the advanced MESH OVERLAY process. It is designed for high current, high-speed switching applications, making it suitable for switch-mode power supplies (SMPS) and DC-AC converters.
Key electrical specifications include a maximum drain-source voltage of 800V, a continuous drain current of 11A at 25°C, and a typical on-resistance (Rds(on)) of 0.65 Ohms at 5.5A and 10V gate drive. The device also features a ±30V gate-source voltage rating and a low gate charge.
With a maximum power dissipation of 190W at 25°C and a thermal resistance junction-to-case of 0.66°C/W, the STW11NB80 is designed for efficient thermal management. It boasts extremely high dv/dt capability and is 100% avalanche tested, ensuring reliability in demanding applications.
The MOSFET is housed in a TO-247-3 package and supports through-hole mounting. Its operating junction temperature can reach up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
11A at Tc=25°C.
Maximum 800mOhm at 5.5A, Vgs=10V; typical 0.65 Ohm.
70nC at Vgs=10V.
2900pF at Vds=25V.
190W at Tc=25°C.
150°C.