| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,109 pcs
|
4109 pcs | On Request | 1 | On Request | On Request | 2017 | On Request | On Request | |
|
4,080 pcs
|
4080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,209 pcs
|
3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,390 pcs
|
1390 pcs | On Request | 1 | On Request | On Request | 804 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW10NK80Z is a single N-Channel MOSFET designed for power applications. It offers a high drain-source voltage (Vdss) of 800V and can handle a continuous drain current of 9A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 900mOhm at 4.5A and 10V, a gate charge (Qg) of 72 nC at 10V, and an input capacitance (Ciss) of 2180 pF at 25V. The gate threshold voltage (Vgs(th)) is 4.5V at 100µA, with a maximum gate-source voltage (Vgs) of ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 160W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STW10NK80Z is packaged in a TO-247-3 case and features through-hole mounting. Environmental compliance includes RoHS3 compliance, an MSL of 1, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
9A at case temperature.
Maximum 900mOhm at 4.5A drain current and 10V gate voltage.
Maximum 4.5V at 100µA drain current.
-55°C to 150°C junction temperature.
TO-247-3 through-hole.
Maximum 72nC at 10V gate voltage.