| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,035 pcs
|
1035 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW10N105K5 is a single N-Channel MOSFET designed for high voltage applications. It features a maximum drain-source voltage (Vdss) of 1050V and a continuous drain current of 6A at a case temperature (Tc).
Key electrical characteristics include a maximum on-state resistance (Rds On) of 1.3 Ohms at 3A and 10V gate-source voltage, and a gate charge (Qg) of 21.5 nC at 10V. The threshold gate-source voltage (Vgs(th)) is 5V at 100µA, with a maximum gate-source voltage (Vgs) of 30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for through-hole mounting.
The component is supplied in a TO-247-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1050V maximum.
TO-247-3 through-hole package.
-55°C to 150°C (junction).
6A at case temperature.
1.3 Ohm maximum at 3A and 10V gate drive.
5V maximum at 100µA drain current.
130W at case temperature.