| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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232 pcs
|
232 pcs | On Request | 1 | On Request | On Request | 0722+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STV300NH02L is a single N-Channel MOSFET belonging to the discrete semiconductor products category. This device is designed for demanding applications requiring high current handling capabilities, featuring a maximum continuous drain current of 200A at a case temperature and a drain-source voltage of 24V.
Key electrical characteristics include a low on-resistance of 1mOhm at 80A and 10V, and a gate threshold voltage of 2V at 250µA. The MOSFET operates with a gate-to-source voltage range of ±20V and requires a drive voltage of 10V or 5V. Input capacitance is rated at 7055 pF at 15V, with a gate charge of 109 nC at 10V.
This component is built using Metal Oxide technology and has a maximum power dissipation of 300W at the case temperature. It is specified for operation within a temperature range of -55°C to 175°C (TJ).
The STV300NH02L is packaged in a PowerSO-10 Exposed Bottom Pad format, suitable for surface mounting. Its robust design and specifications make it suitable for various power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V maximum drain-source voltage.
PowerSO-10 with exposed bottom pad.
-55°C to 175°C junction temperature.
200A at case temperature.
1mOhm maximum at 80A and 10V gate voltage.
109 nC at 10V gate voltage.
7055 pF at 15V drain-source voltage.