| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,800 pcs
|
9800 pcs | On Request | 1 | On Request | On Request | 806 | On Request | On Request | |
|
5,113 pcs
|
5113 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STV160NF03LT4 is an N-Channel Power MOSFET designed for high current, low voltage switching applications where efficiency is crucial. It features a 30V drain-source breakdown voltage and can handle a continuous drain current of 160A at 25°C.
This MOSFET boasts an ultra-low on-resistance of typically 0.0019 Ohms and a maximum of 0.0028 Ohms at 80A and 10V gate drive. It also offers a low threshold drive and fast switching characteristics. The device is packaged in a PowerSO-10 Exposed Bottom Pad, suitable for surface mounting.
Key electrical parameters include a gate threshold voltage of 1V and a gate charge of 140 nC. The device has a maximum power dissipation of 210W at 25°C case temperature and an operating junction temperature up to 175°C. Its thermal resistance from junction to case is 0.71 °C/W.
Applications for this MOSFET include buck converters in high-performance telecom and VRM DC-DC converters. The STV160NF03LT4 is built on STMicroelectronics' STripFET™ process, known for high packing density and superior switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at ID = 250 µA and VGS = 0.
The maximum continuous drain current is 160A at TC = 25°C and 113A at TC = 100°C.
The maximum drain-source on-resistance is 2.8mΩ at VGS = 10V and ID = 80A.
The maximum operating junction temperature is 175°C.
The STV160NF03LT4 is available in a PowerSO-10 package with an exposed bottom pad.
The maximum gate-source voltage is ±15V.
The maximum power dissipation is 210W at TC = 25°C.