| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 0743+ROHS | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STV160NF02LAT4 is a single N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 160A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.7mOhm at 80A and 10V gate drive, a gate charge (Qg) of 175nC at 10V, and an input capacitance (Ciss) of 5500pF at 15V.
This MOSFET operates at temperatures up to 175°C (TJ) and has a maximum power dissipation of 210W (Tc). It is housed in a PowerSO-10 Exposed Bottom Pad package and is designed for surface mounting.
The STV160NF02LAT4 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STV160NF02LAT4 is 20V.
The STV160NF02LAT4 has a continuous drain current of 160A at the case temperature.
The maximum on-resistance (Rds On) for the STV160NF02LAT4 is 2.7mOhm when measured at 80A drain current and 10V gate-source voltage.
The STV160NF02LAT4 is designed for surface mounting.
The operating temperature for the STV160NF02LAT4 is up to 175°C (TJ).