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STU9N65M2 The STMicroelectronics STU9N65M2 is an N-Channel MOSFET with a 650V drain-source voltage and a 5A current rating. It is housed in a TO-251 (IPAK) package.
Mfr Part #:

STU9N65M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STU9N65M2 is an N-Channel MOSFET with a 650V drain-source voltage and a 5A current rating. It is housed in a TO-251 (IPAK) package.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

STU9N65M2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 18+ On Request On Request
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STU9N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU9N65M2 Description

Short technical summary and product information.

The STMicroelectronics STU9N65M2 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and can handle a continuous drain current of 5A (Tc). The MOSFET exhibits a low on-state resistance (Rds On) of 900mOhm at 2.5A and 10V gate-source voltage, ensuring efficient power transfer.

 

With a maximum power dissipation of 60W (Tc) and an operating temperature range of up to 150°C (TJ), this device is suitable for demanding environments. Key electrical characteristics include an input capacitance (Ciss) of 315pF at 100V and a gate charge (Qg) of 10nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±25V.

 

The STU9N65M2 is packaged in a TO-251 (IPAK) configuration with short leads, designed for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, offering reliable performance for various electronic circuits.

STU9N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STU9N65M2 N-Channel MOSFET
Subcategory: Single

STU9N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU9N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU9N65M2 Features

  • 650V drain-source voltage rating.
  • 5A continuous drain current capability.
  • Low 900mOhm maximum on-state resistance.
  • TO-251 (IPAK) through-hole package.
  • Operates up to 150°C junction temperature.

STU9N65M2 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for lighting control systems.
  • Applicable in power factor correction.

STU9N65M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STU9N65M2?

650V.

What is the maximum continuous drain current?

5A at case temperature.

What is the on-resistance of the STU9N65M2?

900mOhm maximum at 2.5A and 10V gate drive.

What is the operating junction temperature range?

Maximum 150°C.

What package is the STU9N65M2 available in?

The STU9N65M2 is available in a TO-251 (IPAK) through-hole package.

What is the gate threshold voltage?

4V maximum at 250µA.

What is the gate charge of the device?

10nC maximum at 10V gate-source voltage.

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