| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
54,075 pcs
|
54075 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU9N60M2 is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It is designed for efficient power switching applications, featuring a low on-resistance of 780mOhm at 3A and 10V gate drive.
This MOSFET has a continuous drain current capability of 5.5A (Tc) and a maximum power dissipation of 60W (Tc). The operating temperature range is from -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 10nC and an input capacitance (Ciss) of 320pF.
The STU9N60M2 is packaged in a TO-251 (IPAK) case with short leads and is designed for through-hole mounting. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected, making it suitable for various industrial and consumer electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
150°C.
Maximum 780mOhm at 3A, 10V.
5.5A at case temperature.
Maximum 4V at 250µA.