| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU9HN65M2 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers a maximum drain-to-source voltage (Vdss) of 650V and can handle a continuous current of 5.5A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 820mOhm when measured at 2.5A drain current and 10V gate-source voltage. The gate charge (Qg) is a maximum of 11.5nC at 10V, and the input capacitance (Ciss) is 325pF at 100V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 60W at the case. It is constructed using MOSFET (Metal Oxide) technology.
The STU9HN65M2 is supplied in a TO-251 (IPAK) package with short leads, suitable for through-hole mounting. The package is also referred to as TO-251-3 Short Leads, IPak, TO-251AA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V.
The maximum continuous drain current is 5.5A at case temperature.
The maximum on-resistance is 820mOhm at 2.5A drain current and 10V gate-to-source voltage.
The maximum operating junction temperature is 150°C.
The STU9HN65M2 is available in a TO-251 (IPAK) through-hole package.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum gate charge is 11.5nC at 10V gate-to-source voltage.