| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STU90N4F3 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 40V and a maximum continuous drain current of 80A at a case temperature. It offers a low on-resistance of 6.5mOhm at 40A and 10V gate-source voltage, with a gate threshold voltage of 4V at 250µA. The device operates within a temperature range of -55°C to 175°C (TJ).
Packaged in an IPAK (TO-251AA) through-hole package, this MOSFET is suitable for various power switching and control applications. Its Metal Oxide Semiconductor technology ensures efficient operation. The input capacitance (Ciss) is 2200 pF at 25V, and the gate charge (Qg) is 54 nC at 10V.
The STU90N4F3 has a maximum power dissipation of 110W (Tc) and supports a gate-source voltage of up to ±20V. It is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is rated at 80A (Tc).
The maximum on-resistance (Rds On) is 6.5mOhm at 40A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in an IPAK package (TO-251-3 Short Leads, IPak, TO-251AA) and uses through-hole mounting.