| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
469 pcs
|
469 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STU7NF25 is an N-channel MOSFET manufactured by STMicroelectronics. It offers a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Tc) of 8A. The MOSFET has a maximum power dissipation of 72W (Tc) and a low on-resistance (Rds On) of 420mOhm at 4A and 10V gate drive.
This component features a gate charge (Qg) of 16nC at 10V and an input capacitance (Ciss) of 500pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-source voltage is ±20V. The operating temperature range is from -55°C to 175°C (TJ).
The STU7NF25 is packaged in a TO-251-3 Short Leads, IPAK, TO-251AA configuration, suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.10 | $2.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 250V.
The maximum continuous drain current is 8A at case temperature (Tc).
The maximum on-resistance (Rds on) is 420mOhm at a gate drive of 10V and drain current of 4A.
The STU7NF25 is supplied in a TO-251-3 (IPAK) through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.
The maximum power dissipation is 72W at case temperature (Tc).