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STU7N80K5 The STU7N80K5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a high breakdown voltage and significant current handling capability.
Mfr Part #:

STU7N80K5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STU7N80K5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a high breakdown voltage and significant current handling capability.
✓ Total Stock: 98 pcs
$ Price Range: $2.56

STU7N80K5 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
98 pcs
On Request
98 pcs On Request 1 On Request On Request 14+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STU7N80K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU7N80K5 Description

Short technical summary and product information.

The STMicroelectronics STU7N80K5 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 800V and can handle a continuous drain current of 6A at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-state resistance (Rds On) of 1.2 Ohms at 3A and 10V gate-source voltage, and a gate charge (Qg) of 13.4 nC. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This device is housed in a TO-251-3 Short Leads, IPak, TO-251AA package, suitable for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching performance.

 

The STU7N80K5 is specified with RoHS3 compliance and an MSL of 1 Unlimited, indicating its suitability for a wide range of electronic designs.

STU7N80K5 Quick Information

Product Type: MOSFET
Canonical Name: STU7N80K5 N-Channel MOSFET
Subcategory: N-Channel

STU7N80K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU7N80K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU7N80K5 Features

  • 800V drain-source voltage rating.
  • 6A continuous drain current.
  • 1.2 Ohm maximum on-state resistance.
  • TO-251 IPak through-hole package.
  • RoHS3 compliant for modern designs.

STU7N80K5 Applications

  • Ideal for high-voltage power supplies.
  • Suitable for switching power converters.
  • Used in motor control circuits.
  • Applicable in lighting control systems.

STU7N80K5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STU7N80K5?

The maximum drain-source voltage is 800V.

What is the continuous drain current rating?

The continuous drain current is 6A at case temperature.

What is the maximum power dissipation?

The maximum power dissipation is 110W at case temperature.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the STU7N80K5 available in?

The part is available in a TO-251 (IPAK) through-hole package.

What is the typical on-resistance?

The maximum on-state resistance is 1.2 Ohm at 10V gate drive and 3A drain current.

What is the gate charge?

The maximum gate charge is 13.4 nC at 10V gate-source voltage.

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