| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU7N65M2 is a 650V N-Channel MOSFET suitable for various power applications. It features a maximum continuous drain current of 5A (Tc) and a low Rds On of 1.15 Ohm at 2.5A, 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component is housed in a TO-251 (IPAK) package with through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 270 pF @ 100V and a gate charge (Qg) of 9 nC @ 10V. The gate-source voltage (Vgs) maximum is ±25V, with a gate threshold voltage (Vgs(th)) of 4V @ 250µA.
The STU7N65M2 has a maximum power dissipation of 60W (Tc). It is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected. This MOSFET is designed for applications requiring reliable high-voltage switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
5A at case temperature.
1.15 Ohm maximum at 2.5A and 10V gate drive.
9 nC at 10V gate-source voltage.
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
-55°C to 150°C junction temperature.
4V maximum at 250µA drain current.