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STU7N60M2 The STMicroelectronics STU7N60M2 is an N-Channel MOSFET with a 600V drain-to-source voltage and 5A continuous current rating. It is supplied in a TO-251 (IPAK) package for through-hole mounting.
Mfr Part #:

STU7N60M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STU7N60M2 is an N-Channel MOSFET with a 600V drain-to-source voltage and 5A continuous current rating. It is supplied in a TO-251 (IPAK) package for through-hole mounting.
✓ Total Stock: 40 pcs
$ Price Range: $2.56

STU7N60M2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
40 pcs
On Request
40 pcs On Request 1 On Request On Request 14+ On Request On Request
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STU7N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU7N60M2 Description

Short technical summary and product information.

The STMicroelectronics STU7N60M2 is a power MOSFET designed for various applications requiring high voltage and current handling capabilities. This N-Channel MOSFET features a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 5A at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 950mOhm at 2.5A and 10V gate-source voltage. The gate charge (Qg) is rated at a maximum of 8.8nC at 10V, and the input capacitance (Ciss) is 271pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage of ±25V.

 

This device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). It is packaged in a TO-251 (IPAK) configuration with short leads, suitable for through-hole mounting.

 

The STU7N60M2 utilizes MOSFET technology and is designed for applications where efficient switching and voltage blocking are critical.

STU7N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STU7N60M2 N-Channel MOSFET
Subcategory: N-Channel

STU7N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU7N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU7N60M2 Features

  • 600V drain-to-source voltage rating.
  • 5A continuous drain current capability.
  • 950mOhm maximum on-resistance.
  • TO-251 (IPAK) package for through-hole mounting.
  • Wide operating temperature range.

STU7N60M2 Applications

  • Suitable for power switching circuits.
  • Used in high-voltage applications.
  • Ideal for general-purpose MOSFET needs.
  • Component in power supply designs.

STU7N60M2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STU7N60M2?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current is 5A.

What is the maximum on-resistance of this MOSFET?

The Rds On is a maximum of 950mOhm at 2.5A and 10V.

What package type is the STU7N60M2 supplied in?

It is supplied in a TO-251 (IPAK) package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

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