| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
464,625 pcs
|
464625 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU6N95K5 is an N-Channel MOSFET belonging to the SuperMESH 5 family. It is designed for power switching applications requiring high voltage and current handling capabilities.
Key electrical specifications include a drain-to-source breakdown voltage of 950V and a continuous drain current of 9A (Tc). The Rds On is specified at a maximum of 1.25 Ohm at 3A and 10V gate drive. Input capacitance (Ciss) is 450 pF @ 100V, and gate charge (Qg) is 13 nC @ 10V. The gate-source voltage maximum is ±30V, with a gate threshold voltage of 5V @ 100µA.
This MOSFET has a maximum power dissipation of 90W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology.
The STU6N95K5 is packaged in a TO-251-3 Short Leads, IPAK, TO-251AA configuration, suitable for through-hole mounting. The supplier device package is TO-251 (IPAK).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 950V.
It is available in a through-hole IPAK (TO-251) package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 9A at case temperature (Tc).
The maximum gate charge is 13 nC at Vgs=10V.
The maximum on-resistance is 1.25 Ohm at Id=3A and Vgs=10V.
The maximum gate-source voltage is ±30V.