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STU6N65K3 The STU6N65K3 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a continuous current rating of 5.4A.
Mfr Part #:

STU6N65K3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STU6N65K3 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a continuous current rating of 5.4A.
✓ Total Stock: 6,000 pcs
$ Price Range: $2.56

STU6N65K3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request 15+ On Request On Request
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STU6N65K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU6N65K3 Description

Short technical summary and product information.

The STU6K65K3 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for use in discrete semiconductor applications. This component features a high drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current of 5.4A at a case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1.3 Ohms at 2.7A and 10V gate-source voltage (Vgs). The gate charge (Qg) is specified at a maximum of 33 nC at 10V Vgs, and the input capacitance (Ciss) is 880 pF at 50V Vds. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, with a maximum gate-to-source voltage (Vgs) of ±30V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It is constructed using MOSFET (Metal Oxide) technology. The component is housed in a TO-251 (IPAK) package with short leads and is designed for through-hole mounting.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1. The REACH status is unaffected.

STU6N65K3 Quick Information

Product Type: MOSFET
Canonical Name: STU6N65K3 N-Channel MOSFET
Subcategory: N-Channel

STU6N65K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU6N65K3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU6N65K3 Features

  • 650V drain-source voltage rating.
  • 5.4A continuous drain current.
  • 1.3 Ohm maximum Rds On.
  • 33 nC maximum gate charge.
  • TO-251 (IPAK) package for through-hole mounting.

STU6N65K3 Applications

  • Suitable for power switching circuits.
  • Used in power supply designs.
  • Applicable for motor control.
  • Ideal for general purpose power applications.

STU6N65K3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STU6N65K3?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the continuous drain current rating of the STU6N65K3?

The continuous drain current is 5.4A at case temperature.

What is the on-resistance of the STU6N65K3?

The maximum on-resistance (Rds on) is 1.3 Ohms at 2.7A and 10V gate drive.

What package does the STU6N65K3 come in?

The STU6N65K3 is available in a TO-251-3 (IPAK) through-hole package.

What is the maximum operating junction temperature of the STU6N65K3?

The maximum junction temperature is 150°C.

What is the gate threshold voltage of the STU6N65K3?

The maximum gate threshold voltage (Vgs(th)) is 4.5V at 50µA drain current.

What is the maximum power dissipation of the STU6N65K3?

The maximum power dissipation is 110W at case temperature.

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