| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,695 pcs
|
21695 pcs | On Request | 1 | On Request | On Request | 0939+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STU6N62K3 is an N-Channel enhancement-mode MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage of 620V and a continuous drain current of 5.5A at case temperature Tc. The device is designed for high voltage switching applications and offers a low on-resistance of 1.2Ω maximum at 2.8A drain current and 10V gate drive.
Key electrical characteristics include a typical input capacitance of 875pF at 50V drain-source voltage, a gate charge of 30nC at 10V gate-source voltage, and a maximum gate threshold voltage of 4.5V at 50µA drain current. The gate-source voltage is rated at ±30V.
The MOSFET is housed in an IPAK (TO-251) package, suitable for through-hole mounting. The maximum power dissipation is specified but the value is not available in the provided data. This component is ideal for power supply circuits, motor control, and DC-DC converters where high efficiency and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
620V.
IPAK package.
30 nC at Vgs = 10V.
1.2 Ω maximum at Id = 2.8A, Vgs = 10V.
4.5V maximum at Id = 50µA.