| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU60N3LH5 is an N-Channel Power MOSFET utilizing STripFET™ V technology. This technology is optimized for very low on-state resistance and low gate charge, making it suitable for demanding switching applications.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 30V and a continuous drain current of 48A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 8.4mOhm at 24A and 10V gate-source voltage. The device also features a low gate charge (Qg) of 8.8nC at 5V gate-source voltage and an input capacitance (Ciss) of 1620pF at 25V drain-source voltage.
With a maximum power dissipation of 60W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the STU60N3LH5 is built for robust performance. The package is TO-251-3 Short Leads, IPak, also known as I-PAK, suitable for through-hole mounting.
This MOSFET is designed for applications requiring efficient power switching, benefiting from its extremely low on-resistance and very low switching gate charge.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The maximum continuous drain current is 48A at a case temperature of 25°C, and 42.8A at 100°C.
The maximum on-resistance is 8.4mOhm, measured with a drain current of 24A and a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C. Storage temperature range is also -55°C to 175°C.
It is available in the IPAK (TO-251AA) package with through-hole mounting.
The maximum gate-source voltage is ±20V.
The maximum power dissipation is 60W at a case temperature of 25°C.