| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,230 pcs
|
129230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
57,000 pcs
|
57000 pcs | On Request | 1 | On Request | On Request | 15+PBF | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU5N95K3 is a single N-Channel MOSFET designed for high voltage applications. It features a maximum drain-to-source voltage (Vdss) of 950V and a continuous drain current of 4A (Tc). The MOSFET has a low on-resistance of 3.5 Ohms at 2A and 10V Vgs, with a gate threshold voltage of 5V at 100µA.
With an operating temperature range of -55°C to 150°C (TJ), the STU5N95K3 is suitable for demanding environments. It has an input capacitance (Ciss) of 460pF at 25V and a gate charge (Qg) of 19nC at 10V. The device is packaged in a TO-251-3 Short Leads, IPAK, TO-251AA format, designed for through-hole mounting.
This MOSFET utilizes Metal Oxide technology and is rated for a maximum power dissipation of 90W (Tc). The gate-to-source voltage (Vgs) maximum is ±30V, and the drive voltage is 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
950V.
TO-251 (IPAK) through-hole package.
-55°C to 150°C junction temperature.
19nC at 10V.
3.5 Ohms at 2A and 10V.
460pF at 25V.
N-Channel.