| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
675 pcs
|
675 pcs | On Request | 1 | On Request | On Request | 0433+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU5N52K3 is a SuperMESH3™ Power MOSFET designed for demanding switching applications. It offers a high drain-source voltage rating of 525V and a continuous drain current of 4.4A at 25°C.
Key electrical characteristics include a maximum on-resistance of 1.5 Ohms at 2.2A and 10V gate drive voltage. The device also features a maximum gate threshold voltage of 4.5V at 50µA, a gate charge of 17 nC at 10V, and an input capacitance of 545 pF at 100V.
With a maximum power dissipation of 70W at 25°C, the STU5N52K3 operates within a temperature range of -55°C to 150°C (TJ). It is housed in an IPAK package suitable for through-hole mounting.
This MOSFET technology provides high avalanche capability and improved diode reverse recovery characteristics, making it suitable for various power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
525V.
4.4A at Tc=25°C.
1.5Ohm maximum at Id=2.2A, Vgs=10V.
-55°C to 150°C (junction).
TO-251 (IPAK) through-hole package.
17nC at Vgs=10V.
100mJ single pulse.