| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,120 pcs
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6120 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The STU5025NLS from VBsemi is a single N-channel MOSFET featuring Trench technology, housed in a TO252 package. It is engineered for low voltage and high efficiency current control applications.
This MOSFET boasts a maximum drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 100A, making it suitable for systems requiring high current density and low power loss. The on-resistance (RDS(ON)) is exceptionally low, measuring 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, which significantly reduces power loss during on-state operation.
With a threshold voltage (Vth) ranging from 0.5V to 1.5V, the STU5025NLS enables efficient switching at lower gate-source voltages. Its ±20V gate-source voltage capability ensures compatibility with various standard drive circuits. This component is ideal for power management, fast switching circuits, and power conversion applications where high efficiency and low power dissipation are critical.
The maximum drain-source voltage (VDS) is 20V.
The typical on-resistance (RDS(ON)) is 4.5mΩ at VGS = 4.5V.
The maximum drain current (ID) is 100A.
The STU5025NLS is available in a TO252 (DPAK) surface-mount package.
The gate threshold voltage (Vth) ranges from 0.5V to 1.5V.
The STU5025NLS uses Trench technology.