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STU4N62K3 The STMicroelectronics STU4N62K3 is an N-Channel MOSFET with a 620V drain-to-source voltage and 3.8A continuous drain current. It is housed in a TO-251 (IPAK) package.
Mfr Part #:

STU4N62K3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STU4N62K3 is an N-Channel MOSFET with a 620V drain-to-source voltage and 3.8A continuous drain current. It is housed in a TO-251 (IPAK) package.
✓ Total Stock: 9,000 pcs
$ Price Range: $2.56

STU4N62K3 Available from 1 distributor

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✓ Non-Authorised
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9,000 pcs
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STU4N62K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU4N62K3 Description

Short technical summary and product information.

The STMicroelectronics STU4N62K3 is an N-Channel MOSFET designed for power applications. It features a high drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 3.8A at 25°C.

 

Key electrical characteristics include a maximum Rds On of 2 Ohms at 1.9A and 10V gate drive voltage, a gate threshold voltage (Vgs(th)) of 4.5V at 50µA, and a maximum gate-source voltage of ±30V. The input capacitance (Ciss) is rated at 550 pF at 50V, and the gate charge (Qg) is 22 nC at 10V.

 

This MOSFET has a maximum power dissipation of 70W and an operating temperature range of 150°C (TJ). It is packaged in a TO-251 (IPAK) through-hole configuration, making it suitable for various electronic designs requiring robust power switching capabilities.

STU4N62K3 Quick Information

Product Type: MOSFET
Series: SuperMESH3™
Canonical Name: STMicroelectronics STU4N62K3 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STU4N62K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU4N62K3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU4N62K3 Features

  • N-Channel MOSFET technology
  • 620V drain-to-source voltage
  • 3.8A continuous drain current
  • TO-251 (IPAK) through-hole package
  • 150°C maximum operating temperature

STU4N62K3 Applications

  • Power supply circuits
  • Switching applications
  • Motor control
  • General purpose power switching

STU4N62K3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STU4N62K3?

The drain-source voltage (Vdss) is 620V.

What is the continuous drain current rating?

The continuous drain current (Id) is 3.8A at 25°C case temperature.

What is the maximum on-resistance?

The maximum Rds(on) is 2Ohm at 1.9A drain current and 10V gate-source voltage.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C.

What package does the STU4N62K3 come in?

It is available in a TO-251-3 (IPAK) through-hole package.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) is 22nC at 10V gate-source voltage.

What is the input capacitance?

The maximum input capacitance (Ciss) is 550pF at 50V drain-source voltage.

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