| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,325 pcs
|
5325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STU4N52K3 is an N-Channel MOSFET designed for power management applications. It features a high drain-to-source voltage rating of 525V and a continuous drain current of 2.5A at 25°C.
Key electrical characteristics include a maximum on-resistance of 2.6 Ohms at 1.25A and 10V gate-source voltage, a gate threshold voltage of 4.5V at 50µA, and a maximum gate-source voltage of ±30V. The device also has a gate charge of 11 nC at 10V and an input capacitance of 334 pF at 100V.
With a maximum power dissipation of 45W and an operating temperature range up to 150°C, this MOSFET is suitable for various power applications. It is mounted via a through-hole method and comes in a TO-251-3 short leads, IPak, or TO-251AA package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 525 V.
The continuous drain current (Id) at 25°C is 2.5 A.
The maximum on-resistance (Rds On) is 2.6 Ohm at 1.25A and 10V gate-source voltage.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-251-3 Short Leads, IPak, or TO-251AA package.
The mounting type is Through Hole.