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STU3N62K3 The STU3N62K3 is an N-Channel power MOSFET from STMicroelectronics with a 620V drain-source voltage rating and 2.7A continuous drain current. It features a low on-resistance of 2.5Ω and comes in a through-hole IPAK package.
Mfr Part #:

STU3N62K3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STU3N62K3 is an N-Channel power MOSFET from STMicroelectronics with a 620V drain-source voltage rating and 2.7A continuous drain current. It features a low on-resistance of 2.5Ω and comes in a through-hole IPAK package.
✓ Total Stock: 22,090 pcs
$ Price Range: $2.56

STU3N62K3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
22,090 pcs
On Request
22090 pcs On Request 1 On Request On Request 08+ On Request On Request
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STU3N62K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STU3N62K3 Description

Short technical summary and product information.

The STU3N62K3 is an N-Channel power MOSFET manufactured by STMicroelectronics, designed for medium-voltage switching applications. It is rated for a maximum drain-to-source voltage (Vdss) of 620V and can handle a continuous drain current (Id) of 2.7A at 25°C case temperature. The device offers a maximum on-resistance (Rds(on)) of 2.5Ω when driven with a 10V gate voltage at 1.4A drain current.

 

This MOSFET uses standard gate drive voltages up to 10V and can tolerate a maximum gate-source voltage of ±30V. The typical gate threshold voltage is 4.5V at 50µA drain current. Switching performance is supported by an input capacitance (Ciss) of 385pF at 25V drain-source bias and a total gate charge (Qg) of 13nC at 10V gate drive.

 

The STU3N62K3 is housed in a TO-251-3 (IPak) through-hole package, suitable for automated and manual assembly. The maximum power dissipation is 45W at case temperature, and the device can operate at a junction temperature up to 150°C.

STU3N62K3 Quick Information

Product Type: MOSFET
Canonical Name: STU3N62K3 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

STU3N62K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STU3N62K3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STU3N62K3 Features

  • N-Channel MOSFET rated for 620V drain-source voltage.
  • Continuous drain current of 2.7A at 25°C.
  • Low on-resistance of 2.5Ω at 10V gate drive.
  • Through-hole IPAK (TO-251) package for easy mounting.
  • RoHS3 compliant and REACH unaffected.

STU3N62K3 Applications

  • Ideal for offline switch-mode power supplies.
  • Suitable for lighting ballast circuits.
  • Used in AC-DC converters and adapters.
  • Applicable in power management for industrial systems.

STU3N62K3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STU3N62K3?

The maximum drain-to-source voltage (Vdss) is 620V.

What is the continuous drain current rating of the STU3N62K3?

The continuous drain current (Id) is 2.7A at 25°C case temperature.

What is the on-resistance of the STU3N62K3?

The maximum on-resistance (Rds(on)) is 2.5Ω at a gate voltage of 10V and drain current of 1.4A.

What package does the STU3N62K3 come in?

The STU3N62K3 is available in a TO-251-3 (IPak) through-hole package.

What is the maximum operating junction temperature for the STU3N62K3?

The maximum operating junction temperature is 150°C.

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