| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The STU36NB20 is an N-Channel MOSFET manufactured by STMicroelectronics. This component features a breakdown voltage of 200V and a maximum power dissipation of 160W. The drain-source resistance is specified at a minimum of 65mΩ. The maximum operating temperature for this device is 150°C.
Designed with advanced technology, the STU36NB20 utilizes a patent-pending strip layout and proprietary edge termination structure. This design contributes to its low RDS(on) per area, exceptional avalanche capabilities, and superior switching characteristics.
This MOSFET is suitable for various power switching applications where high voltage and power handling are required. Its robust design ensures reliable performance in demanding environments.
The breakdown voltage of the STU36NB20 is 200V.
The maximum power dissipation for the STU36NB20 is 160W.
The minimum drain-source resistance is 65mOhm.
The maximum operating temperature is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.