| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,425 pcs
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22425 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STU2NK100Z is a single N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 1000V and a continuous drain current of 1.85A at case temperature.
The MOSFET has a maximum on-resistance of 8.5 Ohms at 900mA and 10V gate drive voltage. Its gate threshold voltage is 4.5V at 50µA, and the maximum gate-to-source voltage is ±30V. Input capacitance is rated at 499pF at 25V, with a gate charge of 16nC at 10V.
Operating at temperatures from -55°C to 150°C (TJ), this device offers a maximum power dissipation of 70W (Tc). It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-251-3 Short Leads, IPak, TO-251AA package, suitable for through-hole mounting.
The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under standard conditions. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
TO-251-3 Short Leads, IPak, TO-251AA (through-hole).
-55°C to 150°C (junction).
8.5Ohm maximum at 900mA drain current and 10V gate drive.
16 nC maximum at 10V gate-source voltage.
499 pF maximum at 25V drain-source voltage.
70W at case temperature.